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三星携手GLOBALFOUNDRIES开发14nm工艺

来源:IC设计与制造 作者: 发布时间:2014-04-20 浏览量:

根据为期多年的协议,GLOBALFOUNDRIES将授权三星的14纳米FinFET器件, 和三星同步使用自己在美国和韩国的晶圆厂制造和生产14nm。这是在晶圆业第一个能从20纳米真实面积缩放的14纳米FinFET技术,而这术平台已经获得了牵引作为高容量,低功耗的SoC设计中的首选。随着GLOBALFOUNDRIES和三星携手合作,无晶圆厂半导体客户将享有更多的选择和灵活性,因为供应将来自多个世界源地。与此同时,无晶圆厂半导体客户也能维持在流动性和IT基础设施的领导地位。

 

Samsung Electronics Co., Ltd. and GLOBALFOUNDRIES today announced a new strategic collaboration to deliver global capacity for 14 nanometer (nm) FinFET process technology. For the first time, the industry’s most advanced 14nm FinFET technology will be available at both Samsung and GLOBALFOUNDRIES, giving customers the assurance of supply that can only come from true design compatibility at multiple sources across the globe. The new collaboration will leverage the companies’ worldwide leading-edge semiconductor manufacturing capabilities, with volume production at Samsung’s fabs in Hwaseong, Korea and Austin, Texas, as well as GLOBALFOUNDRIES’ fab in Saratoga, New York.

Developed by Samsung and licensed to GLOBALFOUNDRIES, the 14nm FinFET process is based on a technology platform that has already gained traction as the leading choice for high-volume, power-efficient system-on-chip (SoC) designs. The platform taps the benefits of three-dimensional, fully depleted FinFET transistors to overcome the limitations of planar transistor technology, enabling up to 20 percent higher speed, 35 percent less power and 15 percent area scaling over industry 20nm planar technology.

The platform is the first FinFET technology in the foundry industry to provide true area scaling from 20nm. The technology features a smaller contacted gate pitch for higher logic packing density and smaller SRAM bitcells to meet the increasing demand for memory content in advanced SoCs, while still leveraging the proven interconnect scheme from 20nm to offer the benefits of FinFET technology with reduced risk and the fastest time-to-market.

Through this multi-year exclusive technology license, process design kits (PDKs) are available now, allowing customers to start designing with models, design rule manuals, and technology files that have been developed based on silicon results from 14nm FinFET test chips. Mass production for the 14nm FinFET technology will begin at the end of 2014.

“This unprecedented collaboration will result in a global capacity footprint for 14nm FinFET technology that provides AMD with enhanced capabilities to bring our innovative IP into silicon on leading-edge technologies,” said Lisa Su, senior vice president and general manager of Global Business Units at AMD. “The work that GLOBALFOUNDRIES and Samsung are doing together will help AMD deliver our next generation of groundbreaking products with new levels of processing and graphics capabilities to devices ranging from low-power mobile devices, to next-generation dense servers to high-performance embedded solutions.”

“This strategic collaboration extends the value proposition of a single GDSII multi-sourcing to the FinFET nodes. With this true multi-source platform, Samsung and GLOBALFOUNDRIES have made it easy for fabless semiconductor companies to access FinFET technology and increase first-time silicon success,” said Dr. Stephen Woo, president of System LSI business, device solutions, Samsung Electronics Division. “Through this collaboration, we are advancing the foundry business and support model to satisfy what customers have been asking for.”

“Today’s announcement is further proof of the importance of collaboration to enable continued innovation in semiconductor manufacturing,” said GLOBALFOUNDRIES CEO Sanjay Jha. “With this industry-first alignment of 14nm FinFET production capabilities, we can offer greater choice and flexibility to the world’s leading fabless semiconductor companies, while helping the fabless industry to maintain its leadership in the mobile device market.”

 

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